PART |
Description |
Maker |
NDH8436 |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V N-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
NDH854P |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V P-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
2N6796LCC4 |
N-Channel Power MOSFET(Vdss00VId(cont).4A,Rds(on).18ΩN沟道功率型MOS场效应管(Vdss00VId(cont).4A,Rds(on).18Ω
|
SEME-LAB[Seme LAB]
|
AS3833-ZSOT AS3833-ZTQT |
6 channel high-precision LED cont rol ler for 3D-LCD backl ight with integrated step-up cont rol ler
|
ams AG
|
IRF9130SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited Semelab(Magnatec)
|
SS8050LT1 |
Power dissipation
|
TY Semiconductor Co., Ltd
|
FMMT624 |
625mW POWER DISSIPATION
|
TY Semiconductor Co., Ltd
|
D7100W |
Low power dissipation
|
Nell Semiconductor Co.,...
|
FMMT720 FMMT723 |
625mW POWER DISSIPATION
|
TAIWAN SHIKE ELECTRONIC HOLDINGS LIMITED SK Electronics
|
VSC8171 VSC8172 |
SONET/SDH 16:1 Mux with CMU. 5.2V power supply, 2.6W power dissipation
|
Vitesse Semiconductor Corporation Vitesse Semiconductor C...
|